APT10M11JVRU3

Part NumberAPT10M11JVRU3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	APT10M11JVRU3
Standard Package	1
Manufacturer	Microsemi Corporation
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	142A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 71A, 10V
Vgs(th) (Max) @ Id	4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	8600pF @ 25V
FET Feature	-
Power Dissipation (Max)	450W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227
Package / Case	SOT-227-4, miniBLOC

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