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APT11N80BC3G

APT11N80BC3G

Part NumberAPT11N80BC3G

ManufacturerMicrosemi Corporation

DescriptionMOSFET N-CH 800V 11A TO-247

DatasheetPower Products Catalog

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 11A (Tc) 156W (Tc) Through Hole TO-247 [B]

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APT11N80BC3G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Power Products Catalog
Standard Package	1
Manufacturer	Microsemi Corporation
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1585pF @ 25V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 [B]
Package / Case	TO-247-3

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