APT25GP90BDQ1G

Part NumberAPT25GP90BDQ1G

ManufacturerMicrosemi Corporation

DescriptionIGBT 900V 72A 417W TO247

DatasheetAPT25GP90BDQ1(G)

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT PT 900V 72A 417W Through Hole TO-247 [B]

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APT25GP90BDQ1G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Single

Datasheet

APT25GP90BDQ1(G)

Standard Package

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

Packaging

Tube

Part Status

Not For New Designs

IGBT Type

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

72A

Current - Collector Pulsed (Icm)

110A

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 25A

Power - Max

417W

Switching Energy

370µJ (off)

Input Type

Standard

Gate Charge

110nC

Td (on/off) @ 25°C

13ns/55ns

Test Condition

600V, 40A, 4.3Ohm, 15V

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

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