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APT33GF120B2RDQ2G

APT33GF120B2RDQ2G

Part NumberAPT33GF120B2RDQ2G

ManufacturerMicrosemi Corporation

DescriptionIGBT 1200V 64A 357W TMAX

DatasheetAPT33GF120(B2,L)RDQ2(G)

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT NPT 1200V 64A 357W Through Hole

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APT33GF120B2RDQ2G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	APT33GF120(B2,L)RDQ2(G)
Standard Package	1
Manufacturer	Microsemi Corporation
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	64A
Current - Collector Pulsed (Icm)	75A
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 25A
Power - Max	357W
Switching Energy	1.315mJ (on), 1.515mJ (off)
Input Type	Standard
Gate Charge	170nC
Td (on/off) @ 25°C	14ns/185ns
Test Condition	800V, 25A, 4.3Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant

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APT33GF120B2RDQ2G - Tags

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