APT34F100B2

Part NumberAPT34F100B2

ManufacturerMicrosemi Corporation

DescriptionMOSFET N-CH 1000V 35A T-MAX

DatasheetAPT34F100(B2,L)

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 35A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2]

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APT34F100B2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

APT34F100(B2,L)

Standard Package

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

305nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9835pF @ 25V

FET Feature

Power Dissipation (Max)

1135W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

T-MAX™ [B2]

Package / Case

TO-247-3 Variant

All categories