APT45GP120B2DQ2G


APT45GP120B2DQ2G

Part NumberAPT45GP120B2DQ2G

Manufacturer

Description

Datasheet

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

APT45GP120B2DQ2G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
PackagingTube
Part StatusActive
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)113A
Current - Collector Pulsed (Icm)170A
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 45A
Power - Max625W
Switching Energy900µJ (on), 905µJ (off)
Input TypeStandard
Gate Charge185nC
Td (on/off) @ 25°C18ns/100ns
Test Condition600V, 45A, 5Ohm, 15V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant

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APT45GP120B2DQ2G - Tags

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