APT45GP120B2DQ2G
APT45GP120B2DQ2G
Part Number APT45GP120B2DQ2G
Description IGBT 1200V 113A 625W TMAX
Package / Case TO-247-3 Variant
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Lead Time To be Confirmed
Detailed Description IGBT PT 1200V 113A 625W Through Hole
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APT45GP120B2DQ2G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet APT45GP120B2DQ2(G)
Standard Package 1
Manufacturer Microsemi Corporation
Series POWER MOS 7®
Packaging Tube
Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 113A
Current - Collector Pulsed (Icm) 170A
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 45A
Power - Max 625W
Switching Energy 900µJ (on), 905µJ (off)
Input Type Standard
Gate Charge 185nC
Td (on/off) @ 25°C 18ns/100ns
Test Condition 600V, 45A, 5Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
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