APT48M80B2

Part NumberAPT48M80B2

ManufacturerMicrosemi Corporation

DescriptionMOSFET N-CH 800V 48A T-MAX

DatasheetAPT48M80(B2,L)

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 49A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2]

To learn about the specification of APT48M80B2, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add APT48M80B2 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of APT48M80B2.
We are offering APT48M80B2 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

APT48M80B2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

APT48M80(B2,L)

Standard Package

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

305nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9330pF @ 25V

FET Feature

Power Dissipation (Max)

1135W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

T-MAX™ [B2]

Package / Case

TO-247-3 Variant

All categories