APT56F50B2
APT56F50B2
Part Number APT56F50B2
Description MOSFET N-CH 500V 56A TO-247
Package / Case TO-247-3 Variant
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 500V 56A (Tc) 780W (Tc) Through Hole T-MAX™ [B2]
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APT56F50B2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet APT56F50B2,50L
Standard Package 1
Manufacturer Microsemi Corporation
Series POWER MOS 8™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 25V
FET Feature -
Power Dissipation (Max) 780W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package T-MAX™ [B2]
Package / Case TO-247-3 Variant
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