APT80SM120B

Part NumberAPT80SM120B

ManufacturerMicrosemi Corporation

DescriptionPOWER MOSFET - SIC

DatasheetAPT80SM120(B,S)

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1200V 80A (Tc) 555W (Tc) Through Hole TO-247

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APT80SM120B - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

APT80SM120(B,S)

Standard Package

Manufacturer

Microsemi Corporation

Series

Packaging

Bulk

Part Status

Obsolete

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

55mOhm @ 40A, 20V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

235nC @ 20V

Vgs (Max)

+25V, -10V

FET Feature

Power Dissipation (Max)

555W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

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