APTM100DSK35T3G


APTM100DSK35T3G

Part NumberAPTM100DSK35T3G

Manufacturer

Description

Datasheet

Package / CaseSP3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

APTM100DSK35T3G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C22A
Rds On (Max) @ Id, Vgs420mOhm @ 11A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 25V
Power - Max390W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

APTM100DSK35T3G - Tags

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