APTM100H35FT3G

Part NumberAPTM100H35FT3G

ManufacturerMicrosemi Corporation

DescriptionMOSFET 4N-CH 1000V 22A SP3

DatasheetAPTM100H35FT3G

Package / CaseSP3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 22A 390W Chassis Mount SP3

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APTM100H35FT3G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

APTM100H35FT3G

Standard Package

Manufacturer

Microsemi Corporation

Series

Packaging

Bulk

Part Status

Active

FET Type

4 N-Channel (H-Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

1000V (1kV)

Current - Continuous Drain (Id) @ 25°C

22A

Rds On (Max) @ Id, Vgs

420mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

186nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

5200pF @ 25V

Power - Max

390W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP3

Supplier Device Package

SP3

All categories

APTM100H35FT3G

Part NumberAPTM100H35FT3G

ManufacturerMicrosemi Corporation

DescriptionMOSFET 4N-CH 1000V 22A SP3

DatasheetAPTM100H35FT3G

Package / CaseSP3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 22A 390W Chassis Mount SP3

APTM100H35FT3G - Product Attributes

APTM100H35FT3G - Tags