APTM100H80FT1G

Part NumberAPTM100H80FT1G

ManufacturerMicrosemi Corporation

DescriptionMOSFET 4N-CH 1000V 11A SP1

DatasheetAPTM100H80FT1G

Package / CaseSP1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 11A 208W Chassis Mount SP1

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APTM100H80FT1G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

APTM100H80FT1G

Standard Package

Manufacturer

Microsemi Corporation

Series

Packaging

Bulk

Part Status

Obsolete

FET Type

4 N-Channel (H-Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

1000V (1kV)

Current - Continuous Drain (Id) @ 25°C

11A

Rds On (Max) @ Id, Vgs

960mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

3876pF @ 25V

Power - Max

208W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP1

Supplier Device Package

SP1

All categories

APTM100H80FT1G

Part NumberAPTM100H80FT1G

ManufacturerMicrosemi Corporation

DescriptionMOSFET 4N-CH 1000V 11A SP1

DatasheetAPTM100H80FT1G

Package / CaseSP1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 11A 208W Chassis Mount SP1

APTM100H80FT1G - Product Attributes

APTM100H80FT1G - Tags