APTM10DAM02G


APTM10DAM02G

Part NumberAPTM10DAM02G

Manufacturer

Description

Datasheet

Package / CaseSP6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

APTM10DAM02G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C495A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5mOhm @ 200A, 10V
Vgs(th) (Max) @ Id4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs1360nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds40000pF @ 25V
FET Feature-
Power Dissipation (Max)1250W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP6
Package / CaseSP6

APTM10DAM02G - Tags

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