APTM120A65FT1G


APTM120A65FT1G

Part NumberAPTM120A65FT1G

Manufacturer

Description

Datasheet

Package / CaseSP1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

APTM120A65FT1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusObsolete
FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C16A
Rds On (Max) @ Id, Vgs780mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds7736pF @ 25V
Power - Max390W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP1
Supplier Device PackageSP1

APTM120A65FT1G - Tags

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