APTM120DA30T1G

Part NumberAPTM120DA30T1G

ManufacturerMicrosemi Corporation

DescriptionMOSFET N-CH 1200V 31A SP1

DatasheetAPTM120DA30T1G

Package / CaseSP1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1200V 31A (Tc) 657W (Tc) Chassis Mount SP1

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APTM120DA30T1G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

APTM120DA30T1G

Standard Package

Manufacturer

Microsemi Corporation

Series

Packaging

Bulk

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

560nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

14560pF @ 25V

FET Feature

Power Dissipation (Max)

657W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP1

Package / Case

SP1

All categories

APTM120DA30T1G

Part NumberAPTM120DA30T1G

ManufacturerMicrosemi Corporation

DescriptionMOSFET N-CH 1200V 31A SP1

DatasheetAPTM120DA30T1G

Package / CaseSP1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1200V 31A (Tc) 657W (Tc) Chassis Mount SP1

APTM120DA30T1G - Product Attributes

APTM120DA30T1G - Tags