APTM120H29FG


APTM120H29FG

Part NumberAPTM120H29FG

Manufacturer

Description

Datasheet

Package / CaseSP6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

APTM120H29FG - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
PackagingBulk
Part StatusActive
FET Type4 N-Channel (H-Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C34A
Rds On (Max) @ Id, Vgs348mOhm @ 17A, 10V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds10300pF @ 25V
Power - Max780W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP6
Supplier Device PackageSP6

APTM120H29FG - Tags

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