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APTM120U10DAG


APTM120U10DAG

Part NumberAPTM120U10DAG

Manufacturer

Description

Datasheet

Package / CaseSP6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

APTM120U10DAG - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs120mOhm @ 58A, 10V
Vgs(th) (Max) @ Id5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs1100nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds28900pF @ 25V
FET Feature-
Power Dissipation (Max)3290W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP6
Package / CaseSP6

APTM120U10DAG - Tags

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