ATP112-TL-H
ATP112-TL-H
Part Number ATP112-TL-H Description MOSFET P-CH 60V 25A ATPAK Package / Case ATPAK (2 leads+tab)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 25A (Ta) 40W (Tc) Surface Mount ATPAK
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ATP112-TL-H - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet ATP112 Standard Package 1 Manufacturer ON Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 43mOhm @ 13A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 33.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 20V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ATPAK Package / Case ATPAK (2 leads+tab)
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