BDV64BG
BDV64BG
Part Number BDV64BG Description TRANS PNP DARL 100V 10A TO247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor PNP - Darlington 100V 10A 125W Through Hole TO-247
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BDV64BG - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet BDV64,65B Standard Package 30 Manufacturer ON Semiconductor Series - Packaging Tube Part Status Active Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 5A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V Power - Max 125W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247
TIP147 STMicroelectronics, Bipolar (BJT) Transistor PNP - Darlington 100V 10A 125W Through Hole TO-247,
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KSP55TA ON Semiconductor, Bipolar (BJT) Transistor PNP 60V 500mA 50MHz 625mW Through Hole TO-92-3,
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DSA300100L Panasonic Electronic Components, Bipolar (BJT) Transistor PNP 50V 100mA 150MHz 100mW Surface Mount SSSMini3-F2-B,
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2SAR533PFRAT100 Rohm Semiconductor, Bipolar (BJT) Transistor PNP 50V 3A 300MHz 500mW Surface Mount MPT3, Automotive, AEC-Q101
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