Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	RF Discretes Selection Guide
Standard Package	3000
Manufacturer	Infineon Technologies
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.8V
Frequency - Transition	22GHz
Noise Figure (dB Typ @ f)	0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Gain	12.5dB ~ 26.5dB
Power - Max	230mW
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 20mA, 3V
Current - Collector (Ic) (Max)	70mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	PG-SOT343-4
Base Part Number	BFP460

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BF776H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount PG-SOT343-4,	View
2SC5066-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount SSM,	View
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BFP460H6327XTSA1

Part NumberBFP460H6327XTSA1