Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	RF Discretes Selection Guide
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	2.8V
Frequency - Transition	65GHz
Noise Figure (dB Typ @ f)	0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain	21.5dB
Power - Max	185mW
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 50mA, 1.5V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	PG-SOT343-4

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ON5088,115	NXP USA Inc., RF Transistor NPN 10V 40mA 55GHz 136mW Surface Mount 4-DFP,	View
SS9018HBU	ON Semiconductor, RF Transistor NPN 15V 50mA 1.1GHz 400mW Through Hole TO-92-3,	View
2SC5226A-4-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP,	View
BFU768F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 220mW Surface Mount 4-DFP,	View
2SC5227A-5-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
BFR460L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 5.8V 50mA 22GHz 200mW Surface Mount PG-TSLP-3-1,	View
BFP540H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount PG-SOT343-4,	View
HFA3102BZ96	Renesas Electronics America Inc., RF Transistor 6 NPN 12V 30mA 10GHz 250mW Surface Mount 14-SOIC,	View
2SC4098T106P	Rohm Semiconductor, RF Transistor NPN 25V 50mA 300MHz 200mW Surface Mount UMT3,	View
MT3S111(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini,	View

BFP620H7764XTSA1

Part NumberBFP620H7764XTSA1