Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFR182W
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain	19dB
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 8V
Current - Collector (Ic) (Max)	35mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	PG-SOT323-3
Base Part Number	BFR182

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HFA3127BZ	Renesas Electronics America Inc., RF Transistor 5 NPN 12V 65mA 8GHz 150mW Surface Mount 16-SOIC,	View
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MMBTH10-7-F	Diodes Incorporated, RF Transistor NPN 25V 50mA 650MHz 300mW Surface Mount SOT-23-3,	View
2SC2714-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View
BFU768F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 220mW Surface Mount 4-DFP,	View
HFA3102BZ96	Renesas Electronics America Inc., RF Transistor 6 NPN 12V 30mA 10GHz 250mW Surface Mount 14-SOIC,	View
BFP650H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 150mA 37GHz 500mW Surface Mount PG-SOT343-4,	View
BFU730LXZ	NXP USA Inc., RF Transistor NPN 3V 30mA 53GHz 160mW Surface Mount 3-DFN1006 (1.0x0.6),	View

BFR182WH6327XTSA1

Part NumberBFR182WH6327XTSA1