Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFR193
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain	10dB ~ 15dB
Power - Max	580mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 30mA, 8V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3
Base Part Number	BFR193

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2SC5086-O,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount SSM,	View
2SC2714-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View
BFU520XRR	NXP USA Inc., RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View
BFP740FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount 4-TSFP,	View
BFP780H6327XTSA1	Infineon Technologies, RF Transistor NPN 6.1V 120mA 900MHz 600mW Surface Mount SOT343-4-2,	View
2SC5488A-TL-H	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 100mW Surface Mount 3-SSFP,	View
2SC5227A-5-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
BFU530XRR	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View
BFR380L3E6327XTMA1	Infineon Technologies, RF Transistor NPN 9V 80mA 14GHz 380mW Surface Mount PG-TSLP-3-1,	View
2SC5085-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View

BFR193E6327HTSA1

Part NumberBFR193E6327HTSA1