Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFU580G
Standard Package	1
Manufacturer	NXP USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	11GHz
Noise Figure (dB Typ @ f)	1.4dB @ 1.8GHz
Gain	10.5dB
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 30mA, 8V
Current - Collector (Ic) (Max)	60mA
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223
Base Part Number	BFU580

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BFU580GX

Part NumberBFU580GX