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BSB056N10NN3GXUMA1

BSB056N10NN3GXUMA1

Part NumberBSB056N10NN3GXUMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 9A WDSON-2

DatasheetBSB056N10NN3 G

Package / Case3-WDSON

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 9A (Ta), 83A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™

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BSB056N10NN3GXUMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSB056N10NN3 G
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	5.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MG-WDSON-2, CanPAK M™
Package / Case	3-WDSON

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