BSB056N10NN3GXUMA1
BSB056N10NN3GXUMA1
Part Number BSB056N10NN3GXUMA1 Description MOSFET N-CH 100V 9A WDSON-2 Package / Case 3-WDSONUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 9A (Ta), 83A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
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BSB056N10NN3GXUMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSB056N10NN3 G Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 83A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 30A, 10V Vgs(th) (Max) @ Id 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 50V FET Feature - Power Dissipation (Max) 2.8W (Ta), 78W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MG-WDSON-2, CanPAK M™ Package / Case 3-WDSON
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