BSC060P03NS3EGATMA1
BSC060P03NS3EGATMA1
Part Number BSC060P03NS3EGATMA1
Description MOSFET P-CH 30V 17.7A TDSON-8
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 30V 17.7A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-1
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BSC060P03NS3EGATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC060P03NS3E G
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 17.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 6020pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
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