BSC0921NDIATMA1


BSC0921NDIATMA1

Part NumberBSC0921NDIATMA1

Manufacturer

Description

Datasheet

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BSC0921NDIATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C17A, 31A
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1025pF @ 15V
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePG-TISON-8

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BSC0921NDIATMA1 - Tags

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