BSC0921NDIATMA1

Part NumberBSC0921NDIATMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	BSC0921NDI
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	17A, 31A
Rds On (Max) @ Id, Vgs	5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1025pF @ 15V
Power - Max	1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	PG-TISON-8

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