BSC097N06NSATMA1
BSC097N06NSATMA1
Part Number BSC097N06NSATMA1
Description MOSFET N-CH 60V 46A TDSON-8
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 46A (Tc) 2.5W (Ta), 36W (Tc) Surface Mount PG-TDSON-8-6
To learn about the specification of BSC097N06NSATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSC097N06NSATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSC097N06NSATMA1.
We are offering BSC097N06NSATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSC097N06NSATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC097N06NS
Standard Package 5000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1075pF @ 30V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-6
Package / Case 8-PowerTDFN
BSC097N06NSATMA1 - Related ProductsMore >>
STW65N60DM6
STMicroelectronics, N-Channel 600V 38A Through Hole TO-247, MDmesh™ DM6
View
TK65S04N1L,LQ
Toshiba Semiconductor and Storage, N-Channel 40V 65A (Ta) 107W (Tc) Surface Mount DPAK+, U-MOSVIII-H
View
TSM60NB099CF C0G
Taiwan Semiconductor Corporation, N-Channel 600V 38A (Tc) 69W (Tc) Through Hole ITO-220S,
View
AO4406A
Alpha & Omega Semiconductor Inc., N-Channel 30V 13A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,
View
SI2318DS-T1-E3
Vishay Siliconix, N-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
IPD70R600P7SAUMA1
Infineon Technologies, N-Channel 700V 8.5A (Tc) 43W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
View
FDC2512
ON Semiconductor, N-Channel 150V 1.4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
View
IRFR4620TRLPBF
Infineon Technologies, N-Channel 200V 24A (Tc) 144W (Tc) Surface Mount D-Pak, HEXFET®
View
BSH114,215
Nexperia USA Inc., N-Channel 100V 500mA (Ta) 360mW (Ta), 830mW (Tc) Surface Mount TO-236AB, TrenchMOS™
View
IRLR3110ZTRPBF
Infineon Technologies, N-Channel 100V 42A (Tc) 140W (Tc) Surface Mount D-Pak, HEXFET®
View
FDA28N50
ON Semiconductor, N-Channel 500V 28A (Tc) 310W (Tc) Through Hole TO-3PN, UniFET™
View
IRFR3607TRPBF
Infineon Technologies, N-Channel 75V 56A (Tc) 140W (Tc) Surface Mount D-Pak, HEXFET®
View
BSC097N06NSATMA1 - Tags