BSG0811NDATMA1
BSG0811NDATMA1
Part Number BSG0811NDATMA1 Description MOSFET 2N-CH 25V 19A/41A 8TISON Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 19A, 41A 2.5W Surface Mount PG-TISON-8
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BSG0811NDATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet BSG0811ND Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) Asymmetrical FET Feature Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 19A, 41A Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 12V Power - Max 2.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package PG-TISON-8
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