BSH108,215
BSH108,215
Part Number BSH108,215
Description MOSFET N-CH 30V 1.9A SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
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Lead Time To be Confirmed
Detailed Description N-Channel 30V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB
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BSH108,215 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSH108
Standard Package 1
Manufacturer Nexperia USA Inc.
Series TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 10V
FET Feature -
Power Dissipation (Max) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
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