Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ BSH108,215

BSH108,215

BSH108,215

Part NumberBSH108,215

ManufacturerNexperia USA Inc.

DescriptionMOSFET N-CH 30V 1.9A SOT23

DatasheetBSH108

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB

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BSH108,215 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSH108
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	TrenchMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	120mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 10V
FET Feature	-
Power Dissipation (Max)	830mW (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3

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