Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSP220
Standard Package	1000
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	225mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	12Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	90pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-73
Package / Case	TO-261-4, TO-261AA

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RE1C001ZPTL	Rohm Semiconductor, P-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL),	View
SPB80P06PGATMA1	Infineon Technologies, P-Channel 60V 80A (Tc) 340W (Tc) Surface Mount PG-TO263-3-2, SIPMOS®	View
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BSP220,115

Part NumberBSP220,115