Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSP89
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	240V
Current - Continuous Drain (Id) @ 25°C	375mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-73
Package / Case	TO-261-4, TO-261AA

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STP11NM65N	STMicroelectronics, N-Channel 650V 11A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™ II	View
FDS8813NZ	ON Semiconductor, N-Channel 30V 18.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
IRFB23N15DPBF	Infineon Technologies, N-Channel 150V 23A (Tc) 3.8W (Ta), 136W (Tc) Through Hole TO-220AB, HEXFET®	View

BSP89,115

Part NumberBSP89,115