BSR50_J35Z


BSR50_J35Z

Part NumberBSR50_J35Z

Manufacturer

Description

Datasheet

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BSR50_J35Z - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package2000
ManufacturerON Semiconductor
Series-
PackagingBulk
Part StatusObsolete
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)1.5A
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic1.6V @ 4mA, 1A
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 500mA, 10V
Power - Max625mW
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3

BSR50_J35Z - Tags

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