Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSS123 Datasheet
Standard Package	1
Manufacturer	Nexperia USA Inc.
Series	TrenchMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	40pF @ 25V
FET Feature	-
Power Dissipation (Max)	250mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3

SSM3K2615TU,LF	Toshiba Semiconductor and Storage, N-Channel 60V 2A (Ta) 800mW (Ta) Surface Mount UFM, π-MOSV	View
SI4800BDY-T1-GE3	Vishay Siliconix, N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SO, TrenchFET®	View
FQPF9N90CT	ON Semiconductor, N-Channel 900V 8A (Tc) 68W (Tc) Through Hole TO-220F, QFET®	View
SIHG21N65EF-GE3	Vishay Siliconix, N-Channel 650V 21A (Tc) 208W (Tc) Through Hole TO-247AC,	View
NDS355N	ON Semiconductor, N-Channel 30V 1.6A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,	View
SIHH14N65EF-T1-GE3	Vishay Siliconix, N-Channel 650V 15A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8,	View
IXFJ26N50P3	IXYS, N-Channel 500V 14A (Tc) 180W (Tc) Through Hole TO-247, HiPerFET™, Polar3™	View
PSMN1R7-60BS,118	Nexperia USA Inc., N-Channel 60V 120A (Tc) 306W (Tc) Surface Mount D2PAK,	View
RCX200N20	Rohm Semiconductor, N-Channel 200V 20A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,	View
NX7002BKR	Nexperia USA Inc., N-Channel 60V 270mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount TO-236AB,	View
IRF1324PBF	Infineon Technologies, N-Channel 24V 195A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®	View
FDD5680	ON Semiconductor, N-Channel 60V 8.5A (Ta) 2.8W (Ta), 60W (Tc) Surface Mount TO-252, PowerTrench®	View

BSS123,215

Part NumberBSS123,215