BSS169H6327XTSA1

Part NumberBSS169H6327XTSA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSS169
Standard Package	1
Manufacturer	Infineon Technologies
Series	SIPMOS®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	0V, 10V
Rds On (Max) @ Id, Vgs	6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id	1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	2.8nC @ 7V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	68pF @ 25V
FET Feature	Depletion Mode
Power Dissipation (Max)	360mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3

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