BSS816NWH6327XTSA1

Part NumberBSS816NWH6327XTSA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSS816NW
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 2.5V
Rds On (Max) @ Id, Vgs	160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id	0.75V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 2.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 10V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT323-3
Package / Case	SC-70, SOT-323

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