Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ BSZ018NE2LSIATMA1

BSZ018NE2LSIATMA1

BSZ018NE2LSIATMA1

Part NumberBSZ018NE2LSIATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 25V 22A TSDSON-8

DatasheetBSZ018NE2LSI

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 22A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL

To learn about the specification of BSZ018NE2LSIATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSZ018NE2LSIATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSZ018NE2LSIATMA1.
We are offering BSZ018NE2LSIATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

BSZ018NE2LSIATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSZ018NE2LSI
Standard Package	5000
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 12V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8-FL
Package / Case	8-PowerTDFN

BSZ018NE2LSIATMA1 - Related Products

	FDP036N10A	ON Semiconductor, N-Channel 100V 120A (Tc) 333W (Tc) Through Hole TO-220-3, PowerTrench®	View
	TK100E10N1,S1X	Toshiba Semiconductor and Storage, N-Channel 100V 100A (Ta) 255W (Tc) Through Hole TO-220, U-MOSVIII-H	View
	BUK9610-100B,118	Nexperia USA Inc., N-Channel 100V 75A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	NTF3055L108T1G	ON Semiconductor, N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223,	View
	PSMN017-30PL,127	Nexperia USA Inc., N-Channel 30V 32A (Tc) 45W (Tc) Through Hole TO-220AB,	View
	IRF840STRLPBF	Vishay Siliconix, N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	R6020ENZ1C9	Rohm Semiconductor, N-Channel 600V 20A (Tc) 120W (Tc) Through Hole TO-247,	View
	IRFZ44NSTRLPBF	Infineon Technologies, N-Channel 55V 49A (Tc) 3.8W (Ta), 94W (Tc) Surface Mount D2PAK, HEXFET®	View
	STL10N65M2	STMicroelectronics, N-Channel 650V 4.5A (Tc) 48W (Tc) Surface Mount PowerFlat™ (5x6) HV,	View
	STB26N60M2	STMicroelectronics, N-Channel 600V 20A (Tc) 169W (Tc) Surface Mount D2PAK, MDmesh™ M2	View
	HUF76439S3ST	ON Semiconductor, N-Channel 60V 75A (Tc) 180W (Tc) Surface Mount D²PAK (TO-263AB), UltraFET™	View
	IRLR110TRPBF	Vishay Siliconix, N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View

BSZ018NE2LSIATMA1 - Tags

BSZ018NE2LSIATMA1 BSZ018NE2LSIATMA1 PDF BSZ018NE2LSIATMA1 datasheet BSZ018NE2LSIATMA1 specification BSZ018NE2LSIATMA1 image BSZ018NE2LSIATMA1 India Renesas Electronics India BSZ018NE2LSIATMA1 buy BSZ018NE2LSIATMA1 BSZ018NE2LSIATMA1 price BSZ018NE2LSIATMA1 distributor BSZ018NE2LSIATMA1 supplier BSZ018NE2LSIATMA1 wholesales