Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ BSZ0901NSATMA1

BSZ0901NSATMA1

BSZ0901NSATMA1

Part NumberBSZ0901NSATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 30V S308

DatasheetBSZ0901NS

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 22A (Ta), 40A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8

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BSZ0901NSATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSZ0901NS
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2850pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerTDFN

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