BSZ097N10NS5ATMA1

Part NumberBSZ097N10NS5ATMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSZ097N10NS5
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	9.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2080pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8-FL
Package / Case	8-PowerTDFN

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STD60N55F3	STMicroelectronics, N-Channel 55V 80A (Tc) 110W (Tc) Surface Mount DPAK, STripFET™ III	View
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PSMN1R7-60BS,118	Nexperia USA Inc., N-Channel 60V 120A (Tc) 306W (Tc) Surface Mount D2PAK,	View