BSZ097N10NS5ATMA1
BSZ097N10NS5ATMA1
Part Number BSZ097N10NS5ATMA1
Description MOSFET N-CH 100V 40A TSDSON-8
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL
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BSZ097N10NS5ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSZ097N10NS5
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 50V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL
Package / Case 8-PowerTDFN
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