BSZ42DN25NS3GATMA1
BSZ42DN25NS3GATMA1
Part Number BSZ42DN25NS3GATMA1
Description MOSFET N-CH 250V 5A TSDSON-8
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 250V 5A (Tc) 33.8W (Tc) Surface Mount PG-TSDSON-8
To learn about the specification of BSZ42DN25NS3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSZ42DN25NS3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSZ42DN25NS3GATMA1.
We are offering BSZ42DN25NS3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSZ42DN25NS3GATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSZ42DN25NS3 G
Standard Package 5000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 425mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 100V
FET Feature -
Power Dissipation (Max) 33.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN
BSZ42DN25NS3GATMA1 - Related ProductsMore >>
RD3T100CNTL1
Rohm Semiconductor, N-Channel 200V 10A (Tc) 85W (Tc) Surface Mount TO-252,
View
BSC024NE2LSATMA1
Infineon Technologies, N-Channel 25V 25A (Ta), 100A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
View
NTD3055-094T4G
ON Semiconductor, N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK,
View
PSMN2R5-60PLQ
Nexperia USA Inc., N-Channel 60V 150A (Tc) 349W (Tc) Through Hole TO-220AB,
View
FDMS039N08B
ON Semiconductor, N-Channel 80V 19.4A (Ta), 100A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
View
FQD18N20V2TM
ON Semiconductor, N-Channel 200V 15A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount D-Pak, QFET®
View
AUIRF1404ZSTRL
Infineon Technologies, N-Channel 40V 160A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®
View
FDS86106
ON Semiconductor, N-Channel 100V 3.4A (Ta) 5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
RF4E100AJTCR
Rohm Semiconductor, N-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2020L8,
View
IRFU3910PBF
Infineon Technologies, N-Channel 100V 16A (Tc) 79W (Tc) Through Hole IPAK (TO-251), HEXFET®
View
TPH7R204PL,LQ
Toshiba Semiconductor and Storage, N-Channel 40V 48A (Tc) 69W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
View
R6030KNXC7
Rohm Semiconductor, N-Channel 600V 30A (Tc) 86W (Tc) Through Hole TO-220FM,
View
BSZ42DN25NS3GATMA1 - Tags