BSZ900N15NS3GATMA1
BSZ900N15NS3GATMA1
Part Number BSZ900N15NS3GATMA1 Description MOSFET N-CH 150V 13A TDSON-8 Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 150V 13A (Tc) 38W (Tc) Surface Mount PG-TSDSON-8
To learn about the specification of BSZ900N15NS3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSZ900N15NS3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSZ900N15NS3GATMA1.
We are offering BSZ900N15NS3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSZ900N15NS3GATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSZ900N15NS3 G Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V, 10V Rds On (Max) @ Id, Vgs 90mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 510pF @ 75V FET Feature - Power Dissipation (Max) 38W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8 Package / Case 8-PowerTDFN
BSZ900N15NS3GATMA1 - Related ProductsMore >>
STP13N95K3 STMicroelectronics, N-Channel 950V 10A (Tc) 190W (Tc) Through Hole TO-220, SuperMESH3™
View
IRFPS40N50LPBF Vishay Siliconix, N-Channel 500V 46A (Tc) 540W (Tc) Through Hole SUPER-247™ (TO-274AA),
View
SQS462EN-T1_GE3 Vishay Siliconix, N-Channel 60V 8A (Tc) 33W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®
View
MTD3055V ON Semiconductor, N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface Mount TO-252-3,
View
FDD3672 ON Semiconductor, N-Channel 100V 6.5A (Ta), 44A (Tc) 135W (Tc) Surface Mount TO-252AA, UltraFET™
View
FDS6690A ON Semiconductor, N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
BSZ0589NSATMA1 Infineon Technologies, N-Channel 30V 17A (Ta) 2.1W (Ta) Surface Mount PG-TSDSON-8-FL, OptiMOS™
View
DMN10H120SFG-7 Diodes Incorporated, N-Channel 100V 3.8A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,
View
STH270N8F7-6 STMicroelectronics, N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H²PAK, DeepGATE™, STripFET™ VII
View
TK8A10K3,S5Q Toshiba Semiconductor and Storage, N-Channel 100V 8A (Ta) 18W (Tc) Through Hole TO-220SIS, U-MOSIV
View
IPS80R750P7AKMA1 Infineon Technologies, N-Channel 800V 7A (Tc) 51W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
View
STF42N60M2-EP STMicroelectronics, N-Channel 600V 34A (Tc) 40W (Tc) Through Hole TO-220FP, MDmesh™ M2-EP
View
BSZ900N15NS3GATMA1 - Tags
English
