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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BTS282Z
Standard Package 1
Manufacturer Infineon Technologies
Series TEMPFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 49V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 232nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
FET Feature Temperature Sensing Diode
Power Dissipation (Max) 300W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-1
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
STD13N60DM2
STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ DM2
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R6046FNZ1C9
Rohm Semiconductor, N-Channel 600V 46A (Tc) 120W (Tc) Through Hole TO-247,
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FCD1300N80Z
ON Semiconductor, N-Channel 800V 4A (Tc) 52W (Tc) Surface Mount DPAK, SuperFET® II
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IRFH5250DTRPBF
Infineon Technologies, N-Channel 25V 40A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®
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RHU002N06T106
Rohm Semiconductor, N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,
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IRFP048PBF
Vishay Siliconix, N-Channel 60V 70A (Tc) 190W (Tc) Through Hole TO-247-3,
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FDMC7660
ON Semiconductor, N-Channel 30V 20A (Ta), 40A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount Power33, PowerTrench®
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TN2524N8-G
Microchip Technology, N-Channel 240V 360mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89),
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SIR826BDP-T1-RE3
Vishay Siliconix, N-Channel 80V 19.8A (Ta), 80.8A (Tc) 5W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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DMTH6004SCTB-13
Diodes Incorporated, N-Channel 60V 100A (Tc) 4.7W (Ta), 136W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101
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STD4N80K5
STMicroelectronics, N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK, SuperMESH5™
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R6020ANZC8
Rohm Semiconductor, N-Channel 600V 20A (Ta) 120W (Tc) Through Hole TO-3PF,
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