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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK626R2-40C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 25V
FET Feature -
Power Dissipation (Max) 128W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
BSS138AKAR
Nexperia USA Inc., N-Channel 60V 200mA (Ta) 300mW (Ta), 1.06W (Tc) Surface Mount TO-236AB,
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BSC100N06LS3GATMA1
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BSP297H6327XTSA1
Infineon Technologies, N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
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TSM70N380CH C5G
Taiwan Semiconductor Corporation, N-Channel 700V 11A (Tc) 125W (Tc) Through Hole TO-251 (IPAK),
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SI3442BDV-T1-E3
Vishay Siliconix, N-Channel 20V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP, TrenchFET®
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PMZ600UNELYL
Nexperia USA Inc., N-Channel 20V 600mA (Tc) 2.7W (Tc) Surface Mount DFN1006-3,
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IPP65R095C7XKSA1
Infineon Technologies, N-Channel 650V 24A (Tc) 128W (Tc) Through Hole PG-TO220-3, CoolMOS™ C7
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SSM3K347R,LF
Toshiba Semiconductor and Storage, N-Channel 38V 2A (Ta) 2W (Ta) Surface Mount SOT-23F, U-MOSIV
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SIR106DP-T1-RE3
Vishay Siliconix, N-Channel 100V 16.1A (Ta), 65.8A (Tc) 3.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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IPD90N03S4L02ATMA1
Infineon Technologies, N-Channel 30V 90A (Tc) 136W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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FDN357N
ON Semiconductor, N-Channel 30V 1.9A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,
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SI7636DP-T1-E3
Vishay Siliconix, N-Channel 30V 17A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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