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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK626R2-40C Standard Package 2500 Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 25V FET Feature - Power Dissipation (Max) 128W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMN3009SFG-7 Diodes Incorporated, N-Channel 30V 16A (Ta), 45A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8,
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IPN70R1K5CEATMA1 Infineon Technologies, N-Channel 700V 5.4A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™
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IPP90R800C3XKSA1 Infineon Technologies, N-Channel 900V 6.9A (Tc) 104W (Tc) Through Hole PG-TO220-3-1, CoolMOS™
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IRFU210PBF Vishay Siliconix, N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA,
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DMN61D9U-7 Diodes Incorporated, N-Channel 60V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23,
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IRLI520NPBF Infineon Technologies, N-Channel 100V 8.1A (Tc) 30W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
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SI4840BDY-T1-E3 Vishay Siliconix, N-Channel 40V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®
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RCJ120N25TL Rohm Semiconductor, N-Channel 250V 12A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS (SC-83),
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IRFD120PBF Vishay Siliconix, N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
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STL12N60M6 STMicroelectronics, N-Channel 600V 6.4A (Tc) 48W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ M6
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RCX510N25 Rohm Semiconductor, N-Channel 250V 51A (Ta) 40W (Tc) Through Hole TO-220FM,
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SPW47N60C3FKSA1 Infineon Technologies, N-Channel 650V 47A (Tc) 415W (Tc) Through Hole PG-TO247-3, CoolMOS™
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