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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK662R4-40C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 199nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 11334pF @ 25V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIB452DK-T1-GE3
Vishay Siliconix, N-Channel 190V 1.5A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single, TrenchFET®
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TK72E08N1,S1X
Toshiba Semiconductor and Storage, N-Channel 80V 72A (Ta) 192W (Tc) Through Hole TO-220, U-MOSVIII-H
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NVMFS4C05NT3G
ON Semiconductor, N-Channel 30V 24.7A (Ta), 116A (Tc) 3.61W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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IRFP150MPBF
Infineon Technologies, N-Channel 100V 42A (Tc) 160W (Tc) Through Hole TO-247AC, HEXFET®
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FDS5690
ON Semiconductor, N-Channel 60V 7A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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BSP126,135
Nexperia USA Inc., N-Channel 250V 375mA (Ta) 1.5W (Ta) Surface Mount SC-73,
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IRFR210TRRPBF
Vishay Siliconix, N-Channel 200V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
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IXTQ88N30P
IXYS, N-Channel 300V 88A (Tc) 600W (Tc) Through Hole TO-3P, PolarHT™
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BUK9Y4R4-40E,115
Nexperia USA Inc., N-Channel 40V 100A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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ZVN3306A
Diodes Incorporated, N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole TO-92-3,
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NVTFS4C05NWFTAG
ON Semiconductor, N-Channel 30V 22A (Ta), 102A (Tc) 3.2W (Ta), 68W (Tc) Surface Mount 8-WDFN (3.3x3.3),
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IRF830APBF
Vishay Siliconix, N-Channel 500V 5A (Tc) 74W (Tc) Through Hole TO-220AB,
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