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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK662R4-40C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 199nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 11334pF @ 25V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Infineon Technologies, N-Channel 100V 100A (Tc) 214W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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IRFD420PBF
Vishay Siliconix, N-Channel 500V 370mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
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ON Semiconductor, N-Channel 40V 370A (Tc) 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101
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