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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7208-40B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2493pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN4R6-60BS,118
Nexperia USA Inc., N-Channel 60V 100A (Tc) 211W (Tc) Surface Mount D2PAK,
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IXFH340N075T2
IXYS, N-Channel 75V 340A (Tc) 935W (Tc) Through Hole TO-247AD (IXFH), GigaMOS™, HiPerFET™, TrenchT2™
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IPW60R180C7XKSA1
Infineon Technologies, N-Channel 600V 13A (Tc) 68W (Tc) Through Hole PG-TO247-3, CoolMOS™ C7
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SI7456CDP-T1-GE3
Vishay Siliconix, N-Channel 100V 27.5A (Tc) 5W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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ON Semiconductor, N-Channel 200V 28A (Tc) 50W (Tc) Through Hole TO-220F, QFET®
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TK33S10N1Z,LQ
Toshiba Semiconductor and Storage, N-Channel 100V 33A (Ta) 125W (Tc) Surface Mount DPAK+, U-MOSVIII-H
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STMicroelectronics, N-Channel 600V 4.8A (Tc) 48W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ II Plus
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Vishay Siliconix, N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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SUP85N10-10-E3
Vishay Siliconix, N-Channel 100V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole TO-220AB, TrenchFET®
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DMN5L06K-7
Diodes Incorporated, N-Channel 50V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,
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SQJ454EP-T1_GE3
Vishay Siliconix, N-Channel 200V 13A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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