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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7626-100B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2891pF @ 25V
FET Feature -
Power Dissipation (Max) 157W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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AOI950A70
Alpha & Omega Semiconductor Inc., N-Channel 700V 5A (Tc) 56.5W (Tc) Through Hole TO-251A, aMOS5™
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Vishay Siliconix, N-Channel 30V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8,
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IXYS, N-Channel 1000V 52A (Tc) 1250W (Tc) Through Hole TO-264, HiPerFET™
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SI5418DU-T1-GE3
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Diodes Incorporated, N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3,
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FDMS86322
ON Semiconductor, N-Channel 80V 13A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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IPB019N06L3GATMA1
Infineon Technologies, N-Channel 60V 120A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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SQP60N06-15_GE3
Vishay Siliconix, N-Channel 60V 56A (Tc) 107W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®
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IRFR220TRPBF
Vishay Siliconix, N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
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