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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK763R8-80E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 169nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12030pF @ 25V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPW60R060P7XKSA1
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ON Semiconductor, N-Channel 75V 19A (Ta) 310W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®
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Texas Instruments, N-Channel 100V 100A (Ta) 214W (Tc) Through Hole TO-220-3, NexFET™
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IRFS3006TRL7PP
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SI2304DDS-T1-GE3
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Infineon Technologies, N-Channel 100V 60A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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ON Semiconductor, N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK,
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IXFN60N80P
IXYS, N-Channel 800V 53A (Tc) 1040W (Tc) Chassis Mount SOT-227B, PolarHV™
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IRF530NPBF
Infineon Technologies, N-Channel 100V 17A (Tc) 70W (Tc) Through Hole TO-220AB, HEXFET®
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ZXM61N03FTA
Diodes Incorporated, N-Channel 30V 1.4A (Ta) 625mW (Ta) Surface Mount SOT-23-3,
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