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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK763R8-80E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 169nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12030pF @ 25V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
DMN2005LP4K-7
Diodes Incorporated, N-Channel 20V 200mA (Ta) 400mW (Ta) Surface Mount X2-DFN1006-3,
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DMN4800LSSQ-13
Diodes Incorporated, N-Channel 30V 8.6A (Ta) 1.46W (Ta) Surface Mount 8-SO, Automotive, AEC-Q101
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BSZ160N10NS3GATMA1
Infineon Technologies, N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
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STF15N60M2-EP
STMicroelectronics, N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2-EP
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SISS92DN-T1-GE3
Vishay Siliconix, N-Channel 250V 3.4A (Ta), 12.3A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET®
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R5009FNJTL
Rohm Semiconductor, N-Channel 500V 9A (Tc) 50W (Tc) Surface Mount LPTS,
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SI4490DY-T1-E3
Vishay Siliconix, N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®
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RCX700N20
Rohm Semiconductor, N-Channel 200V 70A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,
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ZVN0545A
Diodes Incorporated, N-Channel 450V 90mA (Ta) 700mW (Ta) Through Hole TO-92-3,
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DMG6402LDM-7
Diodes Incorporated, N-Channel 30V 5.3A (Ta) 1.12W (Ta) Surface Mount SOT-26,
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IXTH160N10T
IXYS, N-Channel 100V 160A (Tc) 430W (Tc) Through Hole TO-247 (IXTH), TrenchMV™
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IRFU120PBF
Vishay Siliconix, N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,
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