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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK763R8-80E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 169nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12030pF @ 25V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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SI4838BDY-T1-GE3
Vishay Siliconix, N-Channel 12V 34A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®
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BUK763R1-60E,118
Nexperia USA Inc., N-Channel 60V 120A (Tc) 293W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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BUK761R7-40E,118
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STMicroelectronics, N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ II Plus
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STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Through Hole IPAK (TO-251), MDmesh™ II Plus
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Diodes Incorporated, N-Channel 20V 200mA (Ta) 400mW (Ta) Surface Mount X2-DFN1006-3,
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