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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK765R0-100E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11810pF @ 25V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STD10NM60N
STMicroelectronics, N-Channel 600V 10A (Tc) 70W (Tc) Surface Mount DPAK, MDmesh™ II
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STL13NM60N
STMicroelectronics, N-Channel 600V 10A (Tc) 3W (Ta), 90W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ II
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STD7N60M2
STMicroelectronics, N-Channel 600V 5A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™ II Plus
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STP46N60M6
STMicroelectronics, N-Channel 600V 36A (Tc) 250W (Tc) Through Hole TO-220, MDmesh™ M6
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MGSF1N03LT1G
ON Semiconductor, N-Channel 30V 1.6A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236),
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TPH1400ANH,L1Q
Toshiba Semiconductor and Storage, N-Channel 100V 24A (Tc) 1.6W (Ta), 48W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
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RQ1C065UNTR
Rohm Semiconductor, N-Channel 20V 6.5A (Ta) 700mW (Ta) Surface Mount TSMT8,
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STW43N60DM2
STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247, MDmesh™ DM2
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ZVN3306A
Diodes Incorporated, N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole TO-92-3,
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SI4434ADY-T1-GE3
Vishay Siliconix, N-Channel 250V 2.8A (Ta), 4.1A (Tc) 2.9W (Ta), 6W (Tc) Surface Mount 8-SO, ThunderFET®
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BSS127S-7
Diodes Incorporated, N-Channel 600V 50mA (Ta) 610mW (Ta) Surface Mount SOT-23,
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STL33N60M2
STMicroelectronics, N-Channel 600V 22A (Tc) 190W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ II Plus
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