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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK765R0-100E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11810pF @ 25V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFBE30PBF
Vishay Siliconix, N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB,
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FDWS86068-F085
ON Semiconductor, N-Channel 100V 80A (Tc) 214W (Ta) Surface Mount 8-DFN (5.1x6.3), Automotive, AEC-Q101, PowerTrench®
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FDS2734
ON Semiconductor, N-Channel 250V 3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, UltraFET™
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NTMFS4833NT3G
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PSMN4R2-30MLDX
Nexperia USA Inc., N-Channel 30V 70A (Tc) 65W (Tc) Surface Mount LFPAK33,
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IRFP140PBF
Vishay Siliconix, N-Channel 100V 31A (Tc) 180W (Tc) Through Hole TO-247-3,
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SI7172ADP-T1-RE3
Vishay Siliconix, N-Channel 200V Surface Mount PowerPAK® SO-8,
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FDMS86152
ON Semiconductor, N-Channel 100V 14A (Ta), 45A (Tc) 2.7W (Ta), 125W (Tc) Surface Mount Power56, PowerTrench®
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FDMS86252L
ON Semiconductor, N-Channel 150V 4.4A (Ta) 2.5W (Ta), 50W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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IXFX64N60P
IXYS, N-Channel 600V 64A (Tc) 1040W (Tc) Through Hole PLUS247™-3, HiPerFET™, PolarHT™
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STP34NM60ND
STMicroelectronics, N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-220, FDmesh™ II
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PSMN2R2-25YLC,115
Nexperia USA Inc., N-Channel 25V 100A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8,
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