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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK765R0-100E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11810pF @ 25V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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BUK9Y43-60E,115
Nexperia USA Inc., N-Channel 60V 22A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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ON Semiconductor, N-Channel 60V 300A (Tc) 429W (Tj) Surface Mount 8-HPSOF, PowerTrench®
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RCX051N25
Rohm Semiconductor, N-Channel 250V 5A (Tc) 2.23W (Ta), 30W (Tc) Through Hole TO-220FM,
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