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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK765R3-40E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2772pF @ 25V
FET Feature -
Power Dissipation (Max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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FDP8030L
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PSMN2R5-30YL,115
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BUK7237-55A,118
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BUK9215-55A,118
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CSD18509Q5B
Texas Instruments, N-Channel 40V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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IRL3103PBF
Infineon Technologies, N-Channel 30V 64A (Tc) 94W (Tc) Through Hole TO-220AB, HEXFET®
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